Effects of hydrogen on current gain and emitter resistance of poly emitter bipolar transistors

J. Zhao*, G. P. Li, K. Y. Liao, M. R. Chin, T. Vu, J. Y.C. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The effects of hydrogen passivation at the polysilicon grain boundaries and poly/mono-silicon interface on inducing a β increase and Re decrease are investigated in poly emitter transistors. Increase of β and decrease of Re are attributed to the reduction of effective recombination velocity of minority carriers and the decrease of potential barrier for majority carrier transport in the poly emitters by the passivation of silicon dangling bonds, respectively. The implications of the hydrogen passivation on β and Re for devices with a RTA emitter will also be discussed.

Original languageEnglish
Title of host publicationProceedings of the 1993 Bipolar/Bicoms Circuits and Technology
PublisherPubl by IEEE
Pages223-226
Number of pages4
ISBN (Print)0780313178, 9780780313170
DOIs
StatePublished - 1993
EventProceedings of the 1993 Bipolar/Bicoms Circuits and Technology - Minneapolis, MN, USA
Duration: 4 Oct 19935 Oct 1993

Publication series

NameProceedings of the 1993 Bipolar/Bicoms Circuits and Technology

Conference

ConferenceProceedings of the 1993 Bipolar/Bicoms Circuits and Technology
CityMinneapolis, MN, USA
Period4/10/935/10/93

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