Effects of high current pulses on integrated circuit metallization reliability.

B. K. Liew*, N. W. Cheung, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulsed current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (Jp) is less than 4 × 106A/cm2. Design rules based on keeping the average current density (Jav) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.

Original languageEnglish
Pages3-6
Number of pages4
StatePublished - 1 Dec 1988

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