Effects of high-κ gate dielectric materials on metal and silicon gate workfunctions

Yee Chia Yeo*, Pushkar Ranade, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

185 Scopus citations


The dependence of metal and polysilicon gate workfunctions on the underlying gate dielectric in advanced MOS gate stacks is explored. We observe that the metal workfunctions on high-κ dielectrics differ appreciably from their values on SiO 2 or in a vacuum. We also show the first application of the interface dipole theory on the metal-dielectric interface and obtained excellent agreement with experimental data. Important parameters such as the slope parameters for SiO 2, Si 3N 4, ZrO 2, and HfO 2 are extracted. In addition, we also explain the weaker dependence of n+ and p+ polysilicon gate workfunctions on the gate dielectric. Challenges for gate workfunction engineering are highlighted. This work provides additional guidelines on the choice of gate materials for future CMOS technology incorporating high-κ gate dielectrics.

Original languageEnglish
Pages (from-to)342-344
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jun 2002


  • High-κ dielectric materials
  • Interfaces
  • Metal gate
  • Workfunction

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