Effects of high-κ dielectrics on the workfunctions of metal and silicon gates

Y. C. Yeo*, P. Ranade, Q. Lu, R. Lin, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

39 Scopus citations

Abstract

We explore the dependence of metal and poly-silicon gate workfunctions on the underlying gate dielectric in advanced MOS transistors. The interface dipole theory is employed to explain our experimental observation that metal workfunctions on high-κ dielectrics differ appreciably from their values on SiO2 or in vacuum. This model shows excellent agreement with original data and reported results in the literature. In addition, we also explain the weaker dependence of n+ and p+ poly-silicon gate workfunctions on the gate dielectric. Challenges for gate workfunction engineering are highlighted. This work provides additional guidelines on the choice of gate materials for future CMOS technology incorporating high-κ gate dielectrics.

Original languageEnglish
Pages49-50
Number of pages2
StatePublished - 1 Jan 2001
Event2001 VLSI Technology Symposium - Kyoto, Japan
Duration: 12 Jun 200114 Jun 2001

Conference

Conference2001 VLSI Technology Symposium
CountryJapan
CityKyoto
Period12/06/0114/06/01

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