We explore the dependence of metal and poly-silicon gate workfunctions on the underlying gate dielectric in advanced MOS transistors. The interface dipole theory is employed to explain our experimental observation that metal workfunctions on high-κ dielectrics differ appreciably from their values on SiO2 or in vacuum. This model shows excellent agreement with original data and reported results in the literature. In addition, we also explain the weaker dependence of n+ and p+ poly-silicon gate workfunctions on the gate dielectric. Challenges for gate workfunction engineering are highlighted. This work provides additional guidelines on the choice of gate materials for future CMOS technology incorporating high-κ gate dielectrics.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||2001 VLSI Technology Symposium - Kyoto, Japan|
Duration: 12 Jun 2001 → 14 Jun 2001
|Conference||2001 VLSI Technology Symposium|
|Period||12/06/01 → 14/06/01|