Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects

Wendy Lin*, Tzong Kuei Kang, Yean Chyi Perng, Bau Tong Dai, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage. On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.

Original languageEnglish
Pages (from-to)3867-3870
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7
StatePublished - 1 Jul 1998


  • Antenna structure
  • Charging damage
  • Ion energy
  • Leakage current
  • Plasma density

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