Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor

Wei-Kuo Chen*, Jehn Ou, Ching Hao Hsu

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown by metalorganic vapor-phase epitaxy using TMA1, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMA1 and TBAs. Our experimental results indicated that the Al incorporation efficiency increases with the growth temperature and saturates at temperatures above ∼ 625°C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above ∼ 550°C. The reduced As incorporation efficiency at high temperatures may be closely related to the β-elimination process of TBAs, and to the formation of adducts in the gas phase.

Original languageEnglish
Pages (from-to)L1234-L1237
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number10 PART A
DOIs
StatePublished - 1 Oct 1996

Keywords

  • AlAsSb
  • Incorporation efficiency
  • MOCVD

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