Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering

Bo Shiuan Shie, Horng-Chih Lin, Rong Jye Lyu, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> $10^{\mathrm {\mathbf {8}}}$), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm2/V $\cdot $ s) is obtained. The influences of O2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N2 ambient.

Original languageEnglish
Article number2359992
Pages (from-to)3742-3747
Number of pages6
JournalIEEE Transactions on Plasma Science
Volume42
Issue number12
DOIs
StatePublished - 1 Dec 2014

Keywords

  • Film profile engineering (FPE)
  • InGaZnO (IGZO)
  • metal oxide
  • Thin-film transistors (TFTs)

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