Effects of gas phase absorption into Si substrates on plasma doping process

Ryota Higaki*, Kazuo Tsutsui, Yuichiro Sasaki, Sadahiro Akama, Bunji Mizuno, Shunichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In the low energy plasma doping process, the contribution of not only ionised species but also neutral species to the doping process should be considered. In order to investigate such a contribution, experiments of gas phase doping combined with Ar plasma pre-treatment were carried out. Gas phase impurity absorption should be affected by the Si crystalline disorder caused by the plasma doping. Ar plasma was used to simulate this effect. As a result, significant increase of boron dose from the neutral gas phase was observed when the substrate surface was pre-treated by Ar plasma prior to exposure to neutral B2H6/He gas. The boron was considered to be absorbed in the amorphous layer. Understanding and control of this phenomenon are important for plasma doping technology, in which ion irradiation and absorption of neutral species proceed simultaneously.

Original languageEnglish
Title of host publicationESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference
EditorsJose Franca, Paulo Freitas
PublisherIEEE Computer Society
Pages231-234
Number of pages4
ISBN (Electronic)0780379993
ISBN (Print)9780780379992
DOIs
StatePublished - 2003
Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Estoril, Portugal
Duration: 16 Sep 200318 Sep 2003

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference33rd European Solid-State Device Research Conference, ESSDERC 2003
CountryPortugal
CityEstoril
Period16/09/0318/09/03

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