Effects of Ga 2 O 3 deposition power on electrical properties of cosputtered In-Ga-Zn-O semiconductor films and thin-film transistors

Yih Shing Lee*, Chih Hsiang Chang, Yuan Che Lin, Rong Jhe Lyu, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this study, we have successfully fabricated In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with various Ga 2 O 3 deposition powers prepared using a two radio-frequency (RF) (ceramics targets: In 2 O 3 and Ga 2 O 3 ) and one direct-current (DC) (metallic target: Zn) magnetron cosputtering system at room temperature. The carrier concentration for the IGZO films decreases to less than 3 × 10 16 cm -3 when the Ga 2 O 3 deposition power is 175 W and Hall mobility decreases from 12.8 cm 2 V -1 s -1 and saturates at 4.6 cm 2 V -1 s -1 with increasing Ga 2 O 3 deposition power. The increase in the resistivity of the cosputtered films correlates with the decrease in the crystallinity of the InGaZn 7 O 10 phase and the phase transformation from InGaZn 7 O 10 to InGaZn 2 O 5 with increasing Ga 2 O 3 deposition power. With an optimum Ga 2 O 3 deposition power of 150W, cosputtered IGZO TFTs with a higher, saturated drain current of 4.5 μA, good saturation mobility, μ sat of 4.92 cm 2 V -1 s -1 , I on /I off of 10 9 , a low subthreshold swing (SS) of 0.27V/decade, and R SD of 30kΩ have been successfully fabricated.

Original languageEnglish
Article number05HA02
JournalJapanese Journal of Applied Physics
Volume53
Issue number5 SPEC. ISSUE 3
DOIs
StatePublished - 1 Jan 2014

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