Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films

Ray-Hua Horng*, D. S. Wuu, C. C. Leu, S. H. Chan, T. Y. Huang, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 × 1015 cm-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 1014 to 5 × 1015 cm-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.

Original languageEnglish
Pages (from-to)667-670
Number of pages4
JournalMicroelectronics Reliability
Volume40
Issue number4-5
DOIs
StatePublished - 1 Apr 2000

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