Effects of floating-gate doping concentration on flash cell performance

Tiao Yuan Huang*, Fuh Cheng Jong, Horng-Chih Lin, Tien-Sheng Chao, Len Yi Leu, Konrad Young, Chen Hsi Lin, Kuang Y. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we report the effects on flash cell performance of the doping concentration of the horn-shaped floating-gate. It is demonstrated that the floating-gate doping concentration not only determines the work function of the floating-gate, but also affects the resultant interpoly oxide. As a result, the flash cell performance is affected by the floating-gate doping concentration, and should therefore be carefully designed. It is shown that a low doping level (e.g., <1.7 × 10 18 cm -3 ) on the floating-gate results in a high threshold voltage of the flash cell, low cell read current, and degraded write/erase cycling endurance. Flash cells with a medium (e.g., 1.7 × 10 19 cm -3 ) doping level, on the other hand, depict the lowest threshold voltage, and the highest cell read current; while flash cells with the highest doping level (1.7 × 10 20 cm -3 ) used in this study depict a medium threshold voltage. This could be ascribed to the fact that both medium and high doping levels result in a degenerate polysilicon floating-gate with a similar work function; however, a higher doping concentration results in a thicker interpoly oxide, and therefore a higher threshold voltage, and lower read current.

Original languageEnglish
Pages (from-to)5063-5067
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number8
DOIs
StatePublished - 1 Aug 1997

Keywords

  • EEPROM
  • Flash
  • Floating-gate doping
  • Horn-shaped floating-gate
  • Interpoly oxide

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