Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

Pei-Wen Li*, N. Y. Li, H. Q. Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al 0.3 Ga 0.7 As/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.

Original languageEnglish
Pages (from-to)1169-1172
Number of pages4
JournalSolid-State Electronics
Volume44
Issue number7
DOIs
StatePublished - 1 Jul 2000

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