Abstract
We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al 0.3 Ga 0.7 As/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.
Original language | English |
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Pages (from-to) | 1169-1172 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 44 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 2000 |