Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

Pei-Wen Li; N. Y. Li; H. Q. Hou

doi:10.1016/S0038-1101(00)00051-4

Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

Pei-Wen Li^*, N. Y. Li, H. Q. Hou

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al _0.3 Ga _0.7 As/In _0.03 Ga _0.97 As _0.99 N _0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.

Original language	English
Pages (from-to)	1169-1172
Number of pages	4
Journal	Solid-State Electronics
Volume	44
Issue number	7
DOIs	https://doi.org/10.1016/S0038-1101(00)00051-4
State	Published - 1 Jul 2000

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title = "Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors",

abstract = " We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al 0.3 Ga 0.7 As/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs. ",

author = "Pei-Wen Li and Li, {N. Y.} and Hou, {H. Q.}",

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T1 - Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors

AU - Li, Pei-Wen

AU - Li, N. Y.

AU - Hou, H. Q.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al 0.3 Ga 0.7 As/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.

AB - We report the effects of postgrowth annealing on the DC characteristics of p-n-p Al 0.3 Ga 0.7 As/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs (AlGaAs/InGaAsN/GaAs) double heterojunction bipolar transistors (DHBTs). The DC electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs DHBTs with postgrowth anneal are inferior to those of DHBTs without anneal. We found that the current gain decreases by a factor of two and the offset voltage and saturation voltage increase slightly, which indicate that the electrical properties of AlGaAs/InGaAsN/GaAs DHBTs could not be improved by postgrowth anneal treatment. We believe that the compensation effect on the crystalline quality of ex situ thermally annealed n-type InGaAsN base layer is the main factor for degraded DC characteristics of AlGaAs/InGaAsN/GaAs DHBTs.

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DO - 10.1016/S0038-1101(00)00051-4

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JO - Solid-State Electronics

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