Effects of EUV irradiation on Poly-Si SONOS NVM devices

Bing-Yue Tsui*, Chih Chan Yen, Po Hsueh Li, Jui Yao Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effects of extreme-ultraviolet (EUV)-irradiation-induced damage on the characteristics of a siliconoxidenitrideoxidesilicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradiation, which indicates that the tunneling layer is damaged. Endurance performance degrades severely because the damage in the blocking oxide results in serious electron back injection after cycling operations. These defects cannot be recovered after 600 °C annealing. It is recommended that in-process high-dose EUV irradiation on a SONOS stack after a front-end-of-line process should be avoided.

Original languageEnglish
Article number5750026
Pages (from-to)614-616
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number5
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Extreme ultraviolet lithography (EUVL)
  • nonvolatile memory (NVM)
  • radiation damage
  • silicon-oxide-nitride-oxide-silicon (SONOS) memory

Fingerprint Dive into the research topics of 'Effects of EUV irradiation on Poly-Si SONOS NVM devices'. Together they form a unique fingerprint.

Cite this