Effects of dry etching damage removal on low-temperature silicon selective epitaxial growth

H. C. Tseng*, C. Y. Chang, Fu-Ming Pan, L. P. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The epitaxial silicon layer selectively grown on the reactive ion etched (RIE) silicon substrate using CF 4 , CHF 3 and Ar etching gases has been studied. Defects and contaminants induced by the RIE process result in a rough epilayer, and degrade the current-voltage (I-V) characteristics. An interfacial carbide layer is present between the epilayer and the RIE treated substrate. Using an efficient and convenient after-etching treatment with a CF 4 /O 2 low-energy plasma, we obtain a clean Si surface in the patterned oxide windows for selective epitaxial growth, and the electrical characteristics are significantly improved.

Original languageEnglish
Pages (from-to)4710-4714
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number7
DOIs
StatePublished - 1 Dec 1995

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