Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Shun-Tung Yen*, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We theoretically analyze 630-nm band GaInP-AIGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current. As a result, the threshold current is reduced and the emission wavelength is shortened for mulliquantum-well (MQW) lasers by n-type doping. But for Single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.

Original languageEnglish
Pages (from-to)1644-1651
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume34
Issue number9
DOIs
StatePublished - 1 Sep 1998

Keywords

  • Doped lases
  • Quantum well
  • Quantum-well lasers
  • Semiconductor device modeling
  • Semiconductor lasers
  • Spontaneous emission
  • Visible lasers

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