Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off

Jung Tang Chu*, Chih Chiang Kao, Hung Wen Huang, Wen Deng Liang, Chen Fu Chu, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Large-area p-side-down InGaN light-emitting diodes (LEDs) 1000 × 1000 μm2 in size have been fabricated by laser lift-off (LLO). The p-side-down LEDs with different geometric patterns of n-electrodes were fabricated to investigate electrode pattern-dependent optical characteristics. The current crowding effect was observed in the large-area p-side-down InGaN LLO-LEDs. A LED with a well-designed n-electrode pattern shows a uniform distribution of light emission and a higher output power due to uniform current spreading. The output power saturation induced by the current crowding effect was investigated. In the absence of a transparent contact layer for current spreading, the n-electrode pattern has a marked influence on the current distribution and the consequent light output power of the large-area p-side-down LEDs.

Original languageEnglish
Pages (from-to)7910-7912
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
StatePublished - 9 Nov 2005

Keywords

  • GaN LEDs
  • Large-area light-emitting diode (LED)
  • Laser lift-off (LLO)
  • Wafer bonding

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