Effects of crystallinity on the electrical characteristics of counter-doped polycrystalline germanium thin-film transistor via continuous-wave laser crystallization

Yi Shao Li*, Chun Yi Wu, Chan Yu Liao, Jun Dao Luo, Kai Chi Chuang, Wei Shuo Li, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 \mu \text{m} , 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-Type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-Type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm2/V-s.

Original languageEnglish
Article number8705397
Pages (from-to)544-550
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
StatePublished - 1 Jan 2019

Keywords

  • Polycrystalline germanium (poly-Ge)
  • continuous-wave laser crystallization (CLC)
  • counter-doping (CD)
  • thin-film transistor (TFT)

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