Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu*, Shih Hao Su, Hau Wei Fang, Jang Hsing Hsieh, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

Original languageEnglish
Pages (from-to)10018-10021
Number of pages4
JournalApplied Surface Science
Volume257
Issue number23
DOIs
StatePublished - 15 Sep 2011

Keywords

  • Amorphous transparent conducting oxide
  • Cr doping
  • Diluted magnetic semiconductor
  • Indium gallium zinc oxide films

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