Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

Soshi Sato*, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

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