Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

W. J. Chang*, C. C. Hsieh, Jenh-Yih Juang, Kaung-Hsiung Wu, T. M. Uen, Y. S. Gou, C. H. Hsu, Jiunn-Yuan Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

Original languageEnglish
Pages (from-to)4357-4361
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
StatePublished - 15 Oct 2004

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