Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

Wei-I Lee*, T. C. Huang, J. D. Guo, M. S. Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

111 Scopus citations

Abstract

Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Dec 1995

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