Excellent shallow p+n junctions have been formed by implanting BF+2 ions into thin polycrystalline Si films and subsequent annealing. The samples implanted at 50 keV to a dose 5 x 1015 cm-2 show a leakage of 1 nA/cm2 and a junction depth of about 0.05 μm after a 800°C annealing. To reduce the series resistances of the junctions, silicidation with different cobalt thickness was used to drive the as-implanted dopants in the polysilicon films into the resultant junctions of the silicon substrates. For the low energy implantation at 50 keV at all dosages, silicidation can result in poor electrical characteristics due to the confinement of the dopants by the silicidation process. On the other hand, the electrical characteristics can be retained when a higher implantation energy of 100 keV with a dosage higher than 5 x 1015 cm-2 was used. In addition, the samples implanted at 125 keV show poor electrical characteristics for the nonsilicided junctions but good characteristics after the silicidation. It is attributed to the enhanced defect annihilation by the formed silicide. Furthermore, silicided implanted through poly-Si junctions with excellent characteristics can be fabricated after a low temperature (600°C) annealing if the samples are implanted at 100 keV with a dosage higher than 5 x 1015 cm-2.