Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C

Wen Horng Lee, Jing Cheng Lin, Chiapyng Lee*, Huang-Chung Cheng, Tri Rung Yew

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The effects of CH4/SiH4 flow ratio and microwave power on the formation of SiC at 200 °C by electron cyclotron resonance chemical vapor deposition is investigated. When the CH4/SiH4 flow ratio is varied from 0.5 to 10, crystalline phase of films vary from polycrystalline silicon to polycrystalline β-SiC, and finally to amorphous silicon carbide. However, as the microwave power increases from 300 to 1500 W, the film microstructure changes from polycrystalline Si to amorphous SiC, and finally to polycrystalline β-SiC. The deposition mechanism which controls the film characteristics is also presented.

Original languageEnglish
Pages (from-to)17-22
Number of pages6
JournalThin Solid Films
Volume405
Issue number1-2
DOIs
StatePublished - 22 Feb 2002

Keywords

  • Chemical vapor deposition
  • Cyclotron resonance studies
  • Silicon carbide
  • Transmission electron microscopy

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