Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers

Jun Rong Chen*, Chung Hsien Lee, Tsung Shine Ko, Yi An Chang, Tien-chang Lu, Hao-Chung Kuo, Yen Kuang Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been numerically investigated by employing an advanced device-simulation program. The simulation results indicate that the characteristics of InGaN quantum-well lasers can be improved by using the quaternary AlInGaN EBL. When the aluminum and indium compositions in the AlInGaN EBL are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN EBL can be reduced. Under this circumstance, the electron leakage current and the laser threshold current can obviously be decreased as compared with the laser structure with a conventional AlGaN EBL when the built-in polarization is taken into account in the calculation. Furthermore, the AlInGaN EBL also gives a higher refractive index than the AlGaN EBL, which is a benefit for a higher quantum-well optical confinement factor in laser operations.

Original languageEnglish
Article number4451245
Pages (from-to)329-337
Number of pages9
JournalJournal of Lightwave Technology
Volume26
Issue number3
DOIs
StatePublished - 1 Feb 2008

Keywords

  • AlInGaN
  • Electronic blocking layer (EBL)
  • InGaN
  • Numerical simulation
  • Semiconductor lasers

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