Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-films

Toyota Morimoto*, Hisayo Sasaki Momose, Yoshio Ozawa, Kikuo Yamabe, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

59 Scopus citations

Abstract

The boron penetration effect was compared for p+ poly gate PMOSFETs with pure oxide gates and nitrided oxide gates. For a gate thickness of 6.5 nm, reduced boron dosage and rapid thermal processing solve the problem of boron penetration in the pure oxide case. However, when the film thickness is less than 6.5 nm, only a nitrided oxide film can solve the problem. From the results of EDX analysis in nitrided oxide films, it was found that nitrogen build-up at the interface is small and that a nitrogen concentration of only a few percent leads to complete suppression of boron penetration down to the 2 nm range of film thickness. Excellent characteristics in 2.6 nm nitrided oxide gate p-MOSFETs, free from boron penetration effects, were demonstrated.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - Dec 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

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