Effects of bonding technology and thinning process in three-dimensional integration on device characteristics

Cheng Hsien Lu, Chuan An Cheng, Chia Hua Ho, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 μm technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 °C and bonding force up to 2.5×105 Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 μm.

Original languageEnglish
Pages (from-to)8050-8054
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number10
DOIs
StatePublished - 1 Oct 2012

Keywords

  • Bonding Technology
  • Integration
  • N-MOSFET Devices
  • Thinning Process

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