Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Po Tsun Liu*, Chih Hsiang Chang, Po Yi Kuo, Po Wen Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.

Original languageEnglish
Pages (from-to)Q17-Q20
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number3
DOIs
StatePublished - Jan 2018

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