Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts

Chien Jyun Chiou, Shao Pin Chiu, Juhn-Jong Lin, Yi-Chia Chou*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.

Original languageEnglish
Pages (from-to)4276-4280
Number of pages5
JournalCrystEngComm
Volume17
Issue number23
DOIs
StatePublished - 21 Jun 2015

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