Effects of Ar/N2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

Hsiao-Wen Zan*, Kuo Hsi Yen, Pu Kuan Liu, Kuo Hsin Ku, Chien Hsun Chen, Jennchang Hwang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

In this work, we applied a low-temperature (150°C) alumina nitride (AlN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AlN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AlN dielectric greatly lowers the OTFT operating voltage (<5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (>105) were also obtained for the AlN-OTFTs.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number37-41
DOIs
StatePublished - 1 Oct 2006

Keywords

  • AIN
  • Dielectric
  • Low temperature
  • Organic
  • OTFT
  • Pentacene
  • Sputtering

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