Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu*, Cheng Lun Lu, Yew-Chuhg Wu, Ji Hao Cheng, Hao Ouyang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

Original languageEnglish
Pages (from-to)4831-4833
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
StatePublished - 1 Nov 2004

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