Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology

Yi Hsuan Chen, Chun Jung Su, Chen-Ming Hu, Tian-Li Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this letter, we investigate annealing effects in ferroelectric HfZrOx dielectric in metal-insulator-metal devices and metal-oxide-semiconductor capacitors by comparing two annealing methods: rapid thermal annealing (RTA) and microwave annealing (MWA). The tradeoff characteristics between the annealing conditions, polarization-electric field characteristics, gate leakage current, and interface state density Dit) are discussed. We show that: 1) a positive correlation between the remanent polarization (Pr), the gate leakage current, and Dit as the annealing temperature (RTA) and the annealing power (MWA) increase and 2) the MWA is promising for ferroelectric transistors technology, since its low thermal budget can minimize Dit and avoid increase in the gate leakage current.

Original languageEnglish
Article number8629290
Pages (from-to)467-470
Number of pages4
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 2019


  • Hafnium zirconium oxide
  • annealing
  • ferroelectricity

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