Effects of an interposed Cu layer on the enhanced thermal stability of C49 TiSi2

Ming Jun Wang, Wen Tai Lin, Fu-Ming Pan

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of an interposed Cu layer and a surface Cu layer on the C49-C54 TiSi2 transformation temperature were studied. For the Ti/Cu/(100)Si samples the interposed Cu layer significantly enhanced the thermal stability of C49 TiSi2. The temperature for complete C49-C54 TiSi2 transformation was raised from 710 to 735 to 750 °C with the thickness of the interposed Cu layer increasing from 0 to 1.5 to 3.5 nm, correspondingly. Cu was insoluble in C54 TiSi2. For the Cu/Ti/(100)Si samples, the surface Cu layer did not at all enhance the thermal stability of the C49 phase. In the present study, the enhanced thermal stability of C49 TiCuxSi2-x can be attributed to its reduced electron/atom ratio and larger grain size relative to those of C49 TiSi2.

Original languageEnglish
Pages (from-to)343-347
Number of pages5
JournalJournal of Materials Research
Volume17
Issue number2
DOIs
StatePublished - 1 Jan 2002

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