Effects of Alx Ga1-x N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Kung Liang Lin*, Edward Yi Chang, Yu Lin Hsiao, Wei Ching Huang, Tien Tung Luong, Yuen Yee Wong, Tingkai Li, Doug Tweet, Chen Hao Chiang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

GaN film grown on Si substrate using multilayer AlN/Alx Ga 1-x N buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The Alx Ga1-x N films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN growth. The correlation of the Al composition in the Alx Ga1-x N films with respect to the stress induced in the GaN film grown was studied using high-resolution x-ray diffraction, including symmetrical and asymmetrical ω/2θ scans and reciprocal space maps. It is found that with proper design of the Al composition in the Alx Ga1-x N buffer layer, crack-free GaN film can be successfully grown on 6 in. Si (111) substrates using multilayer AlN and Alx Ga1-x N buffer layers.

Original languageEnglish
Pages (from-to)473-477
Number of pages5
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number3
DOIs
StatePublished - 1 Jan 2010

Fingerprint Dive into the research topics of 'Effects of Al<sub>x</sub> Ga<sub>1-x</sub> N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition'. Together they form a unique fingerprint.

Cite this