GaN film grown on Si substrate using multilayer AlN/Alx Ga 1-x N buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The Alx Ga1-x N films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN growth. The correlation of the Al composition in the Alx Ga1-x N films with respect to the stress induced in the GaN film grown was studied using high-resolution x-ray diffraction, including symmetrical and asymmetrical ω/2θ scans and reciprocal space maps. It is found that with proper design of the Al composition in the Alx Ga1-x N buffer layer, crack-free GaN film can be successfully grown on 6 in. Si (111) substrates using multilayer AlN and Alx Ga1-x N buffer layers.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics|
|State||Published - 1 Jan 2010|