Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

Po Lun Cheng*, Chin I. Liao, Hou Ren Wu, Yi G. Chen, Chin Cheng Chien, Chan Lon Yang, S. F. Tzou, Jinsong Tang, Yonah Cho, Errol Sanchez, Vincent C. Chang, Tony Fu, Wen-Syang Hsu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalECS Transactions
Volume3
Issue number7
DOIs
StatePublished - 1 Dec 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 29 Oct 20063 Nov 2006

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