Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation

Shih Chien Liu, Hai Dang Trinh, Gu Ming Dai, Chung Kai Huang, Chang Fu Dee, Burhanuddin Yeop Majlis, Dhrubes Biswas, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

An effective surface cleaning technique is demonstrated for the GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) passivation process. In this study, dilute HF solution and in situ N2 plasma treatments were adopted to remove the native oxide and recover the nitrogen-vacancy defects at the GaN surface before device passivation. To investigate the correlation between the properties of the SiN/GaN interface and the device performance, the GaN MIS-HEMTs were characterized using current-voltage (I-V) measurement, capacitance-voltage (C-V) measurement, and X-ray photoelectron spectroscopy (XPS) analysis. With the application of this surface treatment technique, the device exhibits improved I-V characteristics with low leakage current, low dynamic ON-resistance, and good C-V response with a steep slope. Overall, the results reveal that the oxide-related bonds and nitrogen-vacancy defects at the SiN/GaN interface are the root cause of the GaN MIS-HEMTs performance degradation.

Original languageEnglish
Article number01AD06
JournalJapanese Journal of Applied Physics
Volume55
Issue number1
DOIs
StatePublished - 1 Jan 2016

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