Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y. S. Mor, T. C. Chang*, Po-Tsun Liu, T. M. Tsai, C. W. Chen, S. T. Yan, C. J. Chu, W. F. Wu, Fu-Ming Pan, Water Lur, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

85 Scopus citations

Abstract

Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O2 plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

Original languageEnglish
Pages (from-to)1334-1338
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - 1 Jul 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 6 Jan 200210 Jan 2002

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