Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Kuei Ming Chen*, Hsin Hsiung Huang, Yi Lin Kuo, Pei Lun Wu, Ting Li Chu, Hung Wei Yu, Wei I. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrown on the N-polar face of the free-standing GaN by HVPE. High-resolution X-ray diffraction (HRXRD) measurements were performed to compare the bowings among GaN films before laser lift-off (LLO), after LLO, and after regrowth. The apparent reductions of XRD full-width at half-maximum (FWHM), along with the increase of XRD peak intensity, after regrowth clearly demonstrate the effectiveness of this method to eliminate bowings of the free-standing GaN films.

Original languageEnglish
Pages (from-to)3037-3039
Number of pages3
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
StatePublished - 1 May 2009

Keywords

  • A1. Free-standing GaN
  • A3. HVPE
  • B1. Nitrides
  • B2. GaN

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