Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors

Po Chun Chen, Chih Pin Lin, Chuan Jie Hong, Chih Hao Yang, Yun Yan Lin, Ming Yang Li, Lain Jong Li, Tung Yuan Yu, Chun Jung Su, Kai-Shin Li, Yuan Liang Zhong, Tuo-Hung Hou, Yann Wen Lan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 μA·μm–1 for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm2·V–1·s–1, and the average on–off current ratio of 108 were successfully demonstrated.

Original languageEnglish
Pages (from-to)303-308
Number of pages6
JournalNano Research
Volume12
Issue number2
DOIs
StatePublished - 1 Feb 2019

Keywords

  • field-effect transistors
  • monolayer MoS devices
  • N-methyl-2-pyrrolidone
  • standard wet cleaning

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