Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors

Hsiao-Wen Zan*, Wu Wei Tsai, Chia Hsin Chen, Chuang Chuang Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Applying nanometer dot-like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a-IGZO film.

Original languageEnglish
Pages (from-to)4237-4242
Number of pages6
JournalAdvanced Materials
Volume23
Issue number37
DOIs
StatePublished - 4 Oct 2011

Keywords

  • dot doping
  • self-alignment
  • thin-film transistors

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