Effective control of flat-band voltage in HfO2 gate dielectric with la2O3 incorporation

K. Okamoto*, M. Adachi, K. Kakushima, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations


The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V compared to that of HfO2/Si or HfO2/SiO2. Stacked MOSCAPs were fabricated and the C-V characteristics show that flat-band voltage shift is mainly determined by high-k film which is in contact to Si or SiO2. Using HfLaO with different La concentration, the amount of shift in flat-band voltage could be well controlled, which might be due to the diffusion or pile-up of La atoms to the interface over 420°C. This study provides further insights in controlling the threshold voltage Of HfO2 based oxides.

Original languageEnglish
Title of host publicationESSDERC07 - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Number of pages4
ISBN (Print)1424411238, 9781424411238
StatePublished - 2007
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: 11 Sep 200713 Sep 2007

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference


ConferenceESSDERC 2007 - 37th European Solid-State Device Research Conference

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