Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Y. J. Lai, C. S. Yang, Wei-Kuo Chen, M. C. Lee, Wen-Hao Chang, Wu-Ching Chou*, J. S. Wang, W. J. Huang, Erik S. Jeng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study.

Original languageEnglish
Article number083116
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
StatePublished - 1 Mar 2007

Fingerprint Dive into the research topics of 'Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots'. Together they form a unique fingerprint.

Cite this