Effect of ultraviolet light exposure on a HfOx RRAM device

Kou Chen Liu*, Wen Hsien Tzeng, Kow-Ming Chang, Yi Chun Chan, Chun Chih Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO 2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.

Original languageEnglish
Pages (from-to)7460-7463
Number of pages4
JournalThin Solid Films
Issue number24
StatePublished - 1 Oct 2010


  • ITO
  • Resistive memory
  • RRAM
  • UV light

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