Effect of trimethylsilylation on the film stress of mesoporous silica ultralow-k film stacks

Jr Yu Chen*, Fu-Ming Pan, Da Xien Lin, An Thung Cho, Kuei Jung Chao, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The film stress of the ultralow- k mesoporous silica thin film and the α-SiC:H / mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a spring-back effect and thereby improves the mechanical properties of the porous film. Deposition of a plasma-assisted α-SiC:H layer on the mesoporous silica thin film can also relieve the tensile stress, and even made the film stack become compressively stressed. This is ascribed to the stress compensation and alkoxylation occurring during the α-SiC:H deposition.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number6
DOIs
StatePublished - 1 Jun 2006

Fingerprint Dive into the research topics of 'Effect of trimethylsilylation on the film stress of mesoporous silica ultralow-k film stacks'. Together they form a unique fingerprint.

  • Cite this