Effect of trimethylsilylation on the film stress of mesoporous silica ultralow-k film stacks

Jr Yu Chen*, Fu-Ming Pan, Da Xien Lin, An Thung Cho, Kuei Jung Chao, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The film stress of the ultralow- k mesoporous silica thin film and the α-SiC:H / mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a spring-back effect and thereby improves the mechanical properties of the porous film. Deposition of a plasma-assisted α-SiC:H layer on the mesoporous silica thin film can also relieve the tensile stress, and even made the film stack become compressively stressed. This is ascribed to the stress compensation and alkoxylation occurring during the α-SiC:H deposition.

Original languageEnglish
Pages (from-to)G215-G218
Number of pages4
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - Jan 2006

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