Ferroelectric films of bismuth-containing layered perovskite Sr0.75Bi2.35(Ta2-xTix)O9 (x = 0-0.8) have been prepared using a metal-organic decomposition method. The effects of Ti substitution on the microstructure evolution and ferroelectric properties of Sr0.75Bi2.35Ta2O9 films were investigated. A maximum remanent polarization of 2Pr = 30.7 μC/cm2 was obtained for the Sr0.75Bi2.35Ta1.8Ti0.2O9 film as compared to Sr0.75Bi2.35Ta2O9 films (19.6 μC/cm2) annealed at 800 °C in air. The Ti substitution for Ta leads to charge compensation for the self-produced positive BiSr . due to the occupation of Bi on Sr vacancies and is responsible for the increase in leakage resistance. The leakage current density as low as 2 × 10-8 A/cm2 can be obtained at an applied electric field of 100 kV/cm. Substitution of Ti for Ta shows a positive effect on the fatigue endurance of Sr-deficient Sr0.75Bi2.35Ta2O9 film.
- Ferroelectric films
- Layered perovskite ferroelectrics
- Leakage current
- Remanent polarization