Effect of thermal treatments on HfO2/In0.7Ga 0.3As metal-oxide-semiconductor capacitor characteristics

Chia Hua Chang, Tin En Shie, Yueh Chin Lin, K. Kakushima, H. Iwai, Po Ching Lu, Ting Chun Lin, Guan Ning Huang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO 2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550°C) to improve the interface quality and 2nd low temperature annealing (450°C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In 0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages473-478
Number of pages6
Edition3
DOIs
StatePublished - 1 Dec 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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