Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes

Yew-Chuhg Wu*, Cheng Liao, Wei Chih Peng

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undoped-GaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
StatePublished - 17 Aug 2007

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