Effect of the Phosphor Permanent Substrate on the Angular CCT for White Thin-Film Flip-Chip Light-Emitting Diodes

Ching Ho Tien, Kuo Wei Ho, Huan Yu Chien, Dong Sing Wuu, Ray-Hua Horng

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This paper developed a phosphor layer applied for thin-film flip-chip light-emitting diodes (TFFC-LEDs) to produce uniform phosphor-converted TFFC white LEDs (TFFC-WLEDs) by combination of laser liftoff, secondary transferring, and surface roughening process. The spin-coating method was used for phosphor layer fabrication onto a substrate to form the phosphor permanent substrate. The TFFC-LEDs were then bonded onto the permanent substrate. From the results, the blue TFFC GaN-based LED with roughened u-GaN surface on a glass substrate (TFRG-LED) demonstrated a 54.2% (at 350 mA) enhancement in light output power, compared with a blue flip-chip GaN-on-sapphire based LED. As the TFFC GaN/phosphor-/glass-based white LED with roughened u-GaN surface (TFRG-WLED) was operated at a forward-bias current of 350 mA, the enhancement of luminous flux was increased by 75.5%, compared with a TFFC GaN/phosphor template-/glass-based white LED. The angular correlated color temperature (CCT) deviation of a TFRG-WLED can be reduced to 1279 K in the range from -75° to +75° at 5000-6000 K application. The TFRG-WLED was fabricated on the glass substrate with the roughened u-GaN surface and the structure of phosphor layer closed to the u-GaN. These kinds of FRGB-WLED structure contribute to a better light extraction characteristic and a higher CCT stability.

Original languageEnglish
Article number7553554
Pages (from-to)3977-3982
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - 1 Oct 2016


  • Flip-chip (FC) light-emitting diode (LED)
  • phosphor-converted
  • wafer transferring

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