Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

Jiwei Zhai*, X. Li, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The (Pb,Nb)(Zr,Sn,Ti)O3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field EAFE-FE, FE to AFE switching field EFE-AFE and the hysteresis ΔE=EAFE-FE-EFE-AFE.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalThin Solid Films
Volume446
Issue number2
DOIs
StatePublished - 15 Jan 2004

Keywords

  • Antiferroelectric thin film
  • Electric properties (Section A)
  • Phase transitions
  • Structural properties

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