Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

Jiwei Zhai; X. Li; H. D. Chen

doi:10.1016/j.tsf.2003.09.067

Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O₃ thin films

Jiwei Zhai^*, X. Li, H. D. Chen

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The (Pb,Nb)(Zr,Sn,Ti)O₃ (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO₂/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO₂/Si and LNO/Pt/Ti/SiO₂/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field E_AFE-FE, FE to AFE switching field E_FE-AFE and the hysteresis ΔE=E_AFE-FE-E_FE-AFE.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Thin Solid Films
Volume	446
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2003.09.067
State	Published - 15 Jan 2004

Keywords

Antiferroelectric thin film
Electric properties (Section A)
Phase transitions
Structural properties

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title = "Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films",

abstract = "The (Pb,Nb)(Zr,Sn,Ti)O3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field EAFE-FE, FE to AFE switching field EFE-AFE and the hysteresis ΔE=EAFE-FE-EFE-AFE.",

keywords = "Antiferroelectric thin film, Electric properties (Section A), Phase transitions, Structural properties",

author = "Jiwei Zhai and X. Li and Chen, {H. D.}",

year = "2004",

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journal = "Thin Solid Films",

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T1 - Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

AU - Zhai, Jiwei

AU - Li, X.

AU - Chen, H. D.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - The (Pb,Nb)(Zr,Sn,Ti)O3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field EAFE-FE, FE to AFE switching field EFE-AFE and the hysteresis ΔE=EAFE-FE-EFE-AFE.

AB - The (Pb,Nb)(Zr,Sn,Ti)O3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field EAFE-FE, FE to AFE switching field EFE-AFE and the hysteresis ΔE=EAFE-FE-EFE-AFE.

KW - Antiferroelectric thin film

KW - Electric properties (Section A)

KW - Phase transitions

KW - Structural properties

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