Effect of the mixed N 2/O 2 oxidation process on improvement of the sensitivity of the sige nano-wire

Kow-Ming Chang*, Chu Feng Chen, Chiung Hui Lai, Yu Bin Wang, Chung Hsien Liu, Cheng Ting Hsieh, Chin Ning Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ge condensation has been reported to improve the hole mobility of the SiGe-on-insulator (SGOI). Our previous studies have shown that the higher Ge fraction of Si 1-xGe x nano-wire exhibits higher sensitivity. In this work, we investigated the effect of different oxidation recipe to provide information on the sensitivity of SiGe nano-wire. The 3-amino-propyltrime-thoxy-silane (APTMS) is used to modify the nano-wire's surface potential. Induced sensitivity characteristics of the samples were preformed to estimate the improvement effect. The mixed N 2/O 2 oxidation process with optimization ratio can be an effective technology to improve the sensitivity of SGOI nano-wires.

Original languageEnglish
Title of host publicationSensors, Actuators, and Microsystems (General) - 219th ECS Meeting
Pages145-154
Number of pages10
Edition30
DOIs
StatePublished - 1 Dec 2011
EventSensors, Actuators, and Microsystems General Session - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number30
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSensors, Actuators, and Microsystems General Session - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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