Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes

Ray-Hua Horng, Z. W. Liao, Y. L. Tsai, H. L. Hu, Y. J. Tsai, C. P. Hsu, M. T. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Pages65-69
Number of pages5
Edition3
DOIs
StatePublished - 1 Dec 2009
Event50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number3
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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