Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes

Ray-Hua Horng; Z. W. Liao; Y. L. Tsai; H. L. Hu; Y. J. Tsai; C. P. Hsu; M. T. Chu

doi:10.1149/1.3120687

Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes

Ray-Hua Horng, Z. W. Liao, Y. L. Tsai, H. L. Hu, Y. J. Tsai, C. P. Hsu, M. T. Chu

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.

Original language	English
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Pages	65-69
Number of pages	5
Edition	3
DOIs	https://doi.org/10.1149/1.3120687
State	Published - 1 Dec 2009
Event	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States Duration: 24 May 2009 → 29 May 2009

Publication series

Name	ECS Transactions
Number	3
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Country	United States
City	San Francisco, CA
Period	24/05/09 → 29/05/09

Access to Document

10.1149/1.3120687

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Horng, R-H., Liao, Z. W., Tsai, Y. L., Hu, H. L., Tsai, Y. J., Hsu, C. P., & Chu, M. T. (2009). Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3 (3 ed., pp. 65-69). (ECS Transactions; Vol. 19, No. 3). https://doi.org/10.1149/1.3120687

Horng, Ray-Hua ; Liao, Z. W. ; Tsai, Y. L. ; Hu, H. L. ; Tsai, Y. J. ; Hsu, C. P. ; Chu, M. T. / Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes. ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3. ed. 2009. pp. 65-69 (ECS Transactions; 3).

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title = "Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes",

abstract = "Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.",

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Horng, R-H, Liao, ZW, Tsai, YL, Hu, HL, Tsai, YJ, Hsu, CP & Chu, MT 2009, Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3 edn, ECS Transactions, no. 3, vol. 19, pp. 65-69, 50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting, San Francisco, CA, United States, 24/05/09. https://doi.org/10.1149/1.3120687

Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes. / Horng, Ray-Hua; Liao, Z. W.; Tsai, Y. L.; Hu, H. L.; Tsai, Y. J.; Hsu, C. P.; Chu, M. T.

ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3. ed. 2009. p. 65-69 (ECS Transactions; Vol. 19, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes

AU - Horng, Ray-Hua

AU - Liao, Z. W.

AU - Tsai, Y. L.

AU - Hu, H. L.

AU - Tsai, Y. J.

AU - Hsu, C. P.

AU - Chu, M. T.

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N2 - Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.

AB - Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.

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Horng R-H, Liao ZW, Tsai YL, Hu HL, Tsai YJ, Hsu CP et al. Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3 ed. 2009. p. 65-69. (ECS Transactions; 3). https://doi.org/10.1149/1.3120687